most citedCryogenic low power CMOS analog buffer at 4.2K

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physics.app-ph20191 cited

Cryogenic low power CMOS analog buffer at 4.2K

Yajie Huang, Chao Luo, Tengteng Lu +3

A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs t…

physics.app-ph2019

Characterization of 0.18μm CMOS Ring Oscillator at Liquid Helium Temperature

Chao Luo, Tengteng Lu, Zhen Li +2

This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18μm CMOS technology at li…

physics.app-ph2018

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Tengteng Lu, Zhen Li, Chao Luo +3

Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-ke…

physics.app-ph2018

MOSFET Characterization and Modeling at Cryogenic Temperatures

Chao Luo, Zhen Li, TengTeng Lu +2

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technolo…

physics.app-ph2018

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

Zhen Li, Chao Luo, Tengteng Lu +3

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios…