2 papers
cond-mat.mtrl-sci2025
Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications
Tiziano Bertoli, Elena Stellino, Francesco Minati +14
alpha-Sn has recently been attracting significant interest due to its unique electronic properties. However, this allotrope of Sn is stable only below 13 °C and alternative option…
cond-mat.mes-hall2024
Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling
Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta +1
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors…