Xuefen Cai

most citedUniversal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

24 citations · 27 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2020

Exploring In $_{2}$ (Se $_{1 - x}$ Te $_{x}$ ) $_{3}$ alloys as photovoltaic materials

Wei Li, Xuefen Cai, Nicholas Valdes +4

In $_{2}$ Se $_{3}$ in the three-dimensional (3D) hexagonal crystal structure with space group $P 6_{1}$ ( $γ$ -In $_{2}$ Se $_{3}$ ) has a direct band gap of $\sim$ 1.8 eV and high absorption coeffici…

physics.app-ph2020★ 24 cited

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Yu Song, Guanghui Zhang, Xue-Fen Cai +6

Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-si…

cond-mat.mtrl-sci2019★ 3 cited

Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material

Fernando P. Sabino, Xuefen Cai, Su-Huai Wei +1

Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN…

Exploring In2​(Se1−x​Tex​)3​ alloys as photovoltaic materials

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material

Exploring In $_{2}$ (Se $_{1 - x}$ Te $_{x}$ ) $_{3}$ alloys as photovoltaic materials