17 citations · 18 across the 6 of their papers we have counts for
8 papers · 1 filter
Magnetization reversal and domain structures in perpendicular synthetic antiferromagnets prepared on rigid and flexible substrates
Shaktiranjan Mohanty, Minaxi Sharma, Ashish Kumar Moharana +4
Ferromagnetic (FM) layers separated by nonmagnetic metallic spacer layers can exhibit Ruderman Kittel Kasuya Yosida (RKKY) coupling which may lead to a stable synthetic antiferroma…
Effect of spin glass frustration on exchange bias in NiMn/CoFeB bilayers
Sagarika Nayak, Palash Kumar Manna, Braj Bhusan Singh +1
Exchange bias in ferromagnetic/antiferromagnetic systems can be explained in terms of various interfacial phenomena. Among these spin glass frustration can affect the magnetic prop…
Spin pumping and inverse spin Hall effect in iridium oxide
Biswajit Sahoo, Koustuv Roy, Pushpendra Gupta +3
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this contex…
Simultaneous observation of anti-damping and inverse spin Hall effect in LaSrMnO/Pt bilayer system
Pushpendra Gupta, Braj Bhusan Singh, Koustuv Roy +4
Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of LaSr…
Strain engineered domain structure and their relaxation in perpendicularly magnetized Co/Pt deposited on flexible polyimide
Esita Pandey, Braj Bhusan Singh, Purbasha Sharangi +1
The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials…
Large spin Hall angle and spin mixing conductance in highly resistive antiferromagnetic Mn2Au
Braj Bhusan Singh, Subhankar Bedanta
Antiferromagnetic (AFM) materials recently have shown interest in the research in spintronics due to its zero stray magnetic field, high anisotropy, and spin orbit coupling. In thi…