44 citations · 76 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2020★ 10 cited
Simulation of the growth kinetics in group IV compound semiconductors
A. La Magna, A. Alberti, E. Barbagiovanni +5
We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization a…
physics.app-ph2019★ 22 cited
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
physics.app-ph2019★ 44 cited
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
S. Rascunà, P. Badalà, C. Tringali +8
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…