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S. Rascunà

2 papers hereh-index 10272 citations29 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • physics.app-ph2

identity via Semantic Scholar / OpenAlex

most citedMorphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

44 citations · 58 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2022★ 14 cited

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

Marilena Vivona, Gabriele Bellocchi, Raffaella Lo Nigro +2

In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing…

physics.app-ph2019★ 44 cited

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

S. Rascunà, P. Badalà, C. Tringali +8

This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…

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