50 citations · 66 across the 5 of their papers we have counts for
5 papers
Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…
Comparative studies of optoelectrical properties of prominent PV materials: Halide Perovskite, CdTe, and GaAs
Fan Zhang, Jose F. Castaneda, Shangshang Chen +13
We compare three representative high performance PV materials: halide perovskite MAPbI3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier diffus…
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx
Henan Liu, Yong Zhang, Elizabeth H. Steenbergen +10
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by eith…