2 citations · 2 across the 2 of their papers we have counts for
2 papers
physics.app-ph2022★ 2 cited
Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications
Bolun Zeng, Haochen Zhang, Zikun Xiang +9
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…
physics.app-ph2019
Conduction and valence band offsets of Ga2O3/h-BN heterojunction
Kuang-Hui Li, Carlos G. Torres-Castanedo, Suresh Sundaram +5
h-BN and Ga2O3 are two promising semiconductor materials. However, the band alignment of the Ga2O3/h-BN heterojunction has not been identified, hindering device development. In thi…