20 citations · 21 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2019★ 20 cited
Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
Matthias Arzig, Michael Salamon, Ta Ching Hsiao +2
Two 75mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductiv…
cond-mat.mtrl-sci2019★ 1 cited
Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
Michael Schöler, Maximilian W. Lederer, Philipp Schuh +1
Superconductor based quantum computing has the major drawback of working temperatures which require liquid helium for cooling. A promising approach to overcome this obstacle for qu…