activity
20192023
most citedHigh-speed InAs/GaSb Mid-Wave Infrared Interband Cascade Photodetector at Room Temperature

49 citations · 167 across the 8 of their papers we have counts for

collaborators

8 papers

physics.app-ph2023

Single-pixel p-graded-n junction spectrometers

Jingyi Wang, Beibei Pan, Zi Wang +8

Ultra-compact spectrometers are becoming increasingly popular for their promising applications in biomedical analysis, environmental monitoring, and food safety. In this work, we r…

physics.app-ph2020★ 49 cited

High-speed InAs/GaSb Mid-Wave Infrared Interband Cascade Photodetector at Room Temperature

Zhiyang Xie, Jian Huang, Xuliang Chai +7

High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging…

physics.app-ph2020★ 32 cited

High Speed Mid-Wave Infrared Uni-traveling Carrier Photodetector

Jian Huang, Zhiyang Xie, Yaojiang Chen +2

Mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution application, high speed MWI…

physics.app-ph2019★ 43 cited

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Yaojiang Chen, Xuliang Chai, Zhiyang Xie +6

High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the res…

physics.app-ph2019★ 8 cited

Deep levels analysis in wavelength extended InGaAsBi photodetector

Jian Huang, Baile Chen, Zhuo Deng +5

InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of t…

physics.app-ph2019★ 24 cited

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

Zhuo Deng, Daqian Guo, Claudia González Burguete +5

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Exc…