118 citations · 550 across the 15 of their papers we have counts for
15 papers
Holistic nanowire laser characterization as a route to optimal design
Stephen Church, Nikesh Patel, Ruqaiya Al-Abri +4
Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as bo…
Reciprocal phase transition-enabled electro-optic modulation
Fang Zou, Lei Zou, Ye Tian +15
Electro-optic (EO) modulation is a well-known and essential topic in the field of communications and sensing. Its ultrahigh efficiency is unprecedentedly desired in the current gre…
Room-temperature continuous-wave Dirac-vortex topological lasers on silicon
Jingwen Ma, Taojie Zhou, Mingchu Tang +9
Robust laser sources are a fundamental building block for contemporary information technologies. Originating from condensed-matter physics, the concept of topology has recently ent…
Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si
Xing Zhang, Hui Yang, Yunyan Zhang +1
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers f…
Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires
Yunyan Zhang, H. Aruni Fonseka, Hui Yang +5
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emis…
Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires
Aswathi K Sivan, Lorenzo Di Mario, Yunyan Zhang +6
Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the la…
Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer
Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy
Xiaoli Lin, Michele Natrella, James Seddon +6
The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOV…
Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector
Zhuo Deng, Daqian Guo, Claudia González Burguete +5
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Exc…
High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire
Hassan Ali, Yunyan Zhang, Jing Tang +13
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form…
Monolithic quantum-dot distributed feedback laser array on silicon
Yi Wang, Siming Chen, Ying Yu +12
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped,…
Design rules for dislocation filters
Tom Ward, Ana M. Sánchez, Mingchu Tang +4
The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materia…
Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
Marion J. L. Sourribes, Ivan Isakov, Marina Panfilova +2
We report the growth of InAsSb nanowires () grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease…
III-V quantum light source and cavity-QED on Silicon
Isaac J. Luxmoore, Romain Toro, Osvaldo Del Pozo-Zamudio +8
Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encod…