activity
20182021
most citedDemonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

24 citations · 43 across the 4 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2021

Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires

Yunyan Zhang, H. Aruni Fonseka, Hui Yang +5

Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emis…

cond-mat.mes-hall2021

Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires

Aswathi K Sivan, Lorenzo Di Mario, Yunyan Zhang +6

Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the la…

cond-mat.mes-hall2020

Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer

Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14

Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…

physics.app-ph2020

Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7

Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…

physics.app-ph201919 cited

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

Xiaoli Lin, Michele Natrella, James Seddon +6

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOV…

physics.app-ph201924 cited

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

Zhuo Deng, Daqian Guo, Claudia González Burguete +5

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Exc…