19 citations · 41 across the 5 of their papers we have counts for
5 papers
Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern
Georg Hoffmann, Martina Zupancic, Detlef Klimm +4
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was mo…
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Kingsley Egbo, Esperanza Luna, Jonas Lähnemann +7
By employing a mixed SnO+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1…
Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources
Georg Hoffmann, Zongzhe Cheng, Oliver Brandt +1
In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources, but is enhanced by…
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Melanie Budde, Piero Mazzolini, Johannes Feldl +6
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…
Spin generation in completely MBE grown CoFeSi/MgO/GaAs lateral spin valves
Georg Hoffmann, Jens Herfort, Manfred Ramsteiner
We demonstrate first measurements of successful spin generation in crystalline CoFeSi/MgO/GaAs hybrid structures grown by molecular-beam epitaxy (MBE), with different MgO inter…