Hua Zhou

most citedOptical and structural properties of Si doped

β

-Ga

_{2}

_{3}

(010) thin films homoepitaxially grown by halide vapor phase epitaxy

2 citations · 2 across the 1 of their papers we have counts for

collaborators

3 papers

physics.app-ph2019★ 2 cited

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Bahadir Kucukgok, David J. Mandia, Jacob H. Leach +6

We report the optical, electrical, and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ films grown on (010)-oriented $β$ -Ga $_{2}$ O $_{3}$ substrate via HVPE. Our results show that, de…

cond-mat.mtrl-sci2018

Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays

Guangxu Ju, Dongwei Xu, Matthew J. Highland +7

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) usin…

physics.acc-ph2018

Characterization of the X-ray Coherence Properties of an Undulator Beamline at the Advanced Photon Source

Guangxu Ju, Matthew J. Highland, Carol Thompson +5

In anticipation of the increased use of coherent x-ray methods and the need to upgrade beamlines to match improved source quality, we have characterized the coherence properties of…

Optical and structural properties of Si doped β-Ga2​O3​ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays

Characterization of the X-ray Coherence Properties of an Undulator Beamline at the Advanced Photon Source

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy