An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement

Danial Shafizade, Majid Shalchian, Farzan Jazaeri

In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D…