3 papers
cond-mat.mtrl-sci2026
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Huaide Zhang, Jingxuan Kang, Aidan F. Campbell +3
(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially…
cond-mat.mtrl-sci2025
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Vladimir M. Kaganer, Domenik Spallek, Philipp John +2
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocat…
cond-mat.mtrl-sci2025
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
Wenshan Chen, Kingsley Egbo, Joe Kler +3
Rutile GeO is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO enables bandgap en…