5 papers
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Huaide Zhang, Jingxuan Kang, Aidan F. Campbell +3
(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially…
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
Huaide Zhang, Philipp John, Jingxuan Kang +3
We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection h…
Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing
Huaide Zhang, Aidan F. Campbell, Jingxuan Kang +3
We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change grow…
Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
Jingxuan Kang, Rose-Mary Jose, Oliver Brandt +1
The top-down fabrication of nanowires based on patterning via metal dewetting is a cost-effective and scalable approach that is particularly suited for applications requiring large…
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…