16 citations · 28 across the 6 of their papers we have counts for
3 papers · 1 filter
Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior
Joao H. Quintino Palhares, Yann Beilliard, Fabien Alibart +5
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-d…
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
Yann Beilliard, François Paquette, Frédéric Brousseau +3
This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhi…
Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)
Yann Beilliard, François Paquette, Frédéric Brousseau +3
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K…