activity
20192026
most citedObservation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

28 citations · 90 across the 18 of their papers we have counts for

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Showing 2023Show all

4 papers · 1 filter

physics.app-ph2023

Analog programming of CMOS-compatible AlO/TiO memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

Pierre-Antoine Mouny, Raphaël Dawant, Bastien Galaup +4

The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, ou…

quant-ph2023★ 5 cited

A Cryogenic Memristive Neural Decoder for Fault-tolerant Quantum Error Correction

Victor Yon, Frédéric Marcotte, Pierre-Antoine Mouny +6

Neural decoders for quantum error correction (QEC) rely on neural networks to classify syndromes extracted from error correction codes and find appropriate recovery operators to pr…

cs.AR2023★ 1 cited

Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars

Philippe Drolet, Raphaël Dawant, Victor Yon +9

Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1…

eess.SY2023★ 1 cited

A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini +7

In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current atten…