2 papers
physics.ins-det2019
Negative Capacitance Ion-Sensitive Field-Effect Transistors with improved current sensitivity
Francesco Bellando, Ali Saeidi, Adrian M. Ionescu
Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sens…
physics.app-ph2018
Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors
Ali Saeidi, Farzan Jazaeri, Igor Stolichnov +2
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10…