Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory

Md Golam Morshed, Hamed Vakili, Mohammad Nazmus Sakib +3

We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological in…