66 citations · 95 across the 4 of their papers we have counts for
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Ti alloyed -GaO: route towards wide band gap engineering
A. Barthel, J. W. Roberts, M. Napari +6
The suitability of Ti as a band gap modifier for -GaO was investigated, taking advantage of the isostructural α-phases and high band gap difference between TiO a…
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
J. W. Roberts, P. R. Chalker, B. Ding +7
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate te…
Thick adherent diamond films on AlN with low thermal barrier resistance
Soumen Mandal, Jerome Cuenca, Fabien Massabuau +9
Growth of 100 m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plas…
Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride
Minh Nguyen, Tongtong Zhu, Mehran Kianinia +5
Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host…