108 citations · 309 across the 10 of their papers we have counts for
10 papers
Correlation enhanced resistance hysteresis near half filling in MoS2/WSe2 heterobilayer
Yong Chen, Weikang Zhang, Meizhen Huang +11
Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric lattices, enabling applications in memory devices and sensors. Recent advances in two-dimensional…
Quantum exciton solid with embedded electron-hole solids in double-layer WSe2
Meizhen Huang, Zefei Wu, Chenxuan Lou +2
We studied double-layer WSe2 stacked on opposite sides of thin layers of hexagonal Boron nitride with different densities of electrons and holes. For a fixed hole density, the Coul…
Magnetic Bloch States at Integer Flux Quanta Induced by Super-moiré Potential in Graphene Aligned with Twisted Boron Nitride
Yaqi Ma, Meizhen Huang, Xu Zhang +15
Two-dimensional electron systems in both magnetic fields and periodic potentials are described by Hofstadter butterfly, a fundamental problem of solid-state physics. While moiré sy…
Quantum solid phase and Coulomb drag in two-dimensional electron-electron bilayers of MoS2
Meizhen Huang, Zefei Wu, Ning Wang +1
Coulomb drag experiments can give us information about the interaction state of double-layer systems. Here, we demonstrate anomalous Coulomb drag behaviours in a two-dimensional el…
Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2
Liheng An, Zishu Zhou, Xuemeng Feng +9
Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of at…
Intrinsic nonlinear Hall effect and gate-switchable Berry curvature sliding in twisted bilayer graphene
Meizhen Huang, Zefei Wu, Xu Zhang +8
Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer grap…
Giant nonlinear Hall effect in twisted WSe
Meizhen Huang, Zefei Wu, Jinxin Hu +8
The recently discovered nonlinear Hall effect (NHE) in a few non-interacting systems provides a novel mechanism to generate second harmonic electrical Hall signals under time-rever…
Negative compressibility in MoS2 capacitance
Ruiyan Gao, Zhehan Ying, Liheng An +7
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllab…
Interaction effects and superconductivity signatures in twisted double-bilayer WSe
Liheng An, Xiangbin Cai, Meizhen Huang +6
Twisted bilayer graphene provides a new two-dimensional platform for studying electron interaction phenomena and flat band properties such as correlated insulator transition, super…
Intrinsic valley Hall transport in atomically thin MoS2
Zefei Wu, Benjamin T. Zhou, Gui-Bin Liu +10
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were…