14 citations · 24 across the 5 of their papers we have counts for
6 papers
Correlation enhanced resistance hysteresis near half filling in MoS2/WSe2 heterobilayer
Yong Chen, Weikang Zhang, Meizhen Huang +11
Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric lattices, enabling applications in memory devices and sensors. Recent advances in two-dimensional…
Quantum exciton solid with embedded electron-hole solids in double-layer WSe2
Meizhen Huang, Zefei Wu, Chenxuan Lou +2
We studied double-layer WSe2 stacked on opposite sides of thin layers of hexagonal Boron nitride with different densities of electrons and holes. For a fixed hole density, the Coul…
Magnetic Bloch States at Integer Flux Quanta Induced by Super-moiré Potential in Graphene Aligned with Twisted Boron Nitride
Yaqi Ma, Meizhen Huang, Xu Zhang +15
Two-dimensional electron systems in both magnetic fields and periodic potentials are described by Hofstadter butterfly, a fundamental problem of solid-state physics. While moiré sy…
Negative compressibility in MoS2 capacitance
Ruiyan Gao, Zhehan Ying, Liheng An +7
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllab…
Interaction effects and superconductivity signatures in twisted double-bilayer WSe
Liheng An, Xiangbin Cai, Meizhen Huang +6
Twisted bilayer graphene provides a new two-dimensional platform for studying electron interaction phenomena and flat band properties such as correlated insulator transition, super…
Intrinsic valley Hall transport in atomically thin MoS2
Zefei Wu, Benjamin T. Zhou, Gui-Bin Liu +10
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were…