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cs.ET2020
Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation
Hossein Pourmeidani, Punyashloka Debashis, Zhihong Chen +2
Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM…
cs.ET2020
Modular Simulation Framework for Process Variation Analysis of MRAM-based Deep Belief Networks
Paul Wood, Hossein Pourmeidani, Ronald F. DeMara
Magnetic Random-Access Memory (MRAM) based p-bit neuromorphic computing devices are garnering increasing interest as a means to compactly and efficiently realize machine learning o…