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cond-mat.mtrl-sci2020
Characteristics of Al/Ge Schottky and Ohmic contacts at low temperatures
Shreyas Pitale, Manoranjan Ghosh, S. G. Singh +3
Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transi…
cond-mat.mtrl-sci2019
Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal
Manoranjan Ghosh, Shreyas Pitale, S. G. Singh +6
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at…
cond-mat.mtrl-sci2019
Impurity concentration dependent electrical conduction in germanium crystal at low temperatures
Manoranjan Ghosh, Shreyas Pitale, S. G. Singh +2
Germanium single crystal having 45 mm diameter and 100 mm length of 7N+ purity has been grown by Czochralski method. Structural quality of the crystal has been characterized by Lau…