4 papers
Fabrication of n+ contact on p-type high pure Ge by cathodic electrodeposition of Li and impedance analysis of n+/p diode at low temperatures
Manoranjan Ghosh, Pravahan Salunke, Shreyas Pitale +3
Fabrication of diode by forming n-type electrical contact on germanium (Ge) and its AC impedance analysis is important for radiation detection in the form of pulses. In this work l…
Characteristics of Al/Ge Schottky and Ohmic contacts at low temperatures
Shreyas Pitale, Manoranjan Ghosh, S. G. Singh +3
Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transi…
Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal
Manoranjan Ghosh, Shreyas Pitale, S. G. Singh +6
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at…
Impurity concentration dependent electrical conduction in germanium crystal at low temperatures
Manoranjan Ghosh, Shreyas Pitale, S. G. Singh +2
Germanium single crystal having 45 mm diameter and 100 mm length of 7N+ purity has been grown by Czochralski method. Structural quality of the crystal has been characterized by Lau…