3 papers
eess.SP2025
Enhanced Breakdown and RF Performance in Field-Plated AlGaN/GaN HEMT for High-Power Applications
Tanjim Rahman, Trupti Ranjan Lenka
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radi…
physics.app-ph2021
Analytical Modeling of characteristics using 2D Poisson Equations in AlN/-GaO HEMT
R. Singh, T. R. Lenka, D. K. Panda +3
In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/-G…
physics.app-ph2019
Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Ravi Teja Velpula, Barsha Jain, Thang Ha Quoc Bui +5
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region…