Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Karolina Kalbarczyk, Krzysztof Dybko, Katarzyna Gas +7

Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroep…