Pt-based metallization of PMOS devices for the fabrication of monolithic semiconducting/YBa2Cu3O7-d superconducting devices on silicon

Guillaume Huot, Laurence Mechin, Daniel Bloyet

Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions. The effect of annealing on th…