Current-Driven Magnetic Memory with Tunable Magnetization Switching

S. K. Wong, A. B. Pakhomov, S. T. Hung +2

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices…