activity
20212023
most citedLightly-strained germanium quantum wells with hole mobility exceeding one million

47 citations · 57 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall20231 cited

Hamiltonian Phase Error in Resonantly Driven CNOT Gate Above the Fault-Tolerant Threshold

Yi-Hsien Wu, Leon C. Camenzind, Akito Noiri +8

Because of their long coherence time and compatibility with industrial foundry processes, electron spin qubits are a promising platform for scalable quantum processors. A full-fled…

cond-mat.mes-hall20232 cited

A 2D quantum dot array in planar Si/SiGe

Florian K. Unseld, Marcel Meyer, Mateusz T. Mądzik +7

Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been sho…

cond-mat.mes-hall2023

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Hanifa Tidjani, Alberto Tosato, Alexander Ivlev +6

Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited t…

cond-mat.mes-hall20227 cited

Shared control of a 16 semiconductor quantum dot crossbar array

Francesco Borsoi, Nico W. Hendrickx, Valentin John +6

The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based…

cond-mat.mes-hall202147 cited

Lightly-strained germanium quantum wells with hole mobility exceeding one million

M. Lodari, O. Kong, M. Rendell +5

We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…