3 papers
physics.optics2025
Fast Recovery Dynamics of GaSbBi-based SESAMs for high-fluence operation
Maximilian C. Schuchter, Joonas Hilska, Markus Peil +4
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SE…
cond-mat.mtrl-sci2024
Electronic properties of metamorphic GaSbBi films on GaAs
Joonas Hilska, Janne Puustinen, Eero Koivusalo +1
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates.…
cond-mat.mes-hall2023
Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes
Lucie Leguay, Abhiroop Chellu, Joonas Hilska +4
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-cla…