2 papers
cond-mat.mtrl-sci2025
Mechanism of Defect Generation in Ionizing-irradiated -SiO: The Nonradiative Carrier Capture-Structural Relaxation Model
Yu Song, Chen Qiu, Su-Huai Wei
The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced defects in the -SiO dielectrics, but the conventional ``hole transport-tra…
cond-mat.mtrl-sci2024
Is p-type doping in TeO2 feasible?
Zewen Xiao, Chen Qiu, Su-Huai Wei +1
Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), attracting significant attentio…