Mechanism of $E_{\hat{I}}^3$ Defect Generation in Ionizing-irradiated $a$-SiO${}_2$: The Nonradiative Carrier Capture-Structural Relaxation Model

Yu Song, Chen Qiu, Su-Huai Wei

The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E_{\hat{I}}^3$ defects in the $a$-SiO${}_2$ dielectrics, but the conventional ``hole transport-tra…