A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift

Maciej Matys, Atsushi Yamada, Yoichi Kamada +1

The characterization of deep levels in AlGaN/GaN heterostructures is one of the most important problems in GaN high electron mobility transistors (HEMTs) technology. This work repo…