91 citations · 460 across the 30 of their papers we have counts for
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Quantitative analysis of the blue-green single-photon emission from a quantum dot in a thick tapered nanowire
Saransh Raj Gosain, Edith Bellet-Amalric, Eric Robin +5
Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nan…
Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires
Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche +5
The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape,…
A High Throughput Study of both Compositionally Graded and Homogeneous Fe-Pt Thin Films
Yuan Hong, Isabelle de Moraes, Gabriel Gomez Eslava +7
Compositionally graded Fe-Pt thin films were prepared on stationary 100 mm Si substrates by magnetron sputtering a base target of Fe on which a piece of Pt is asymmetrically positi…
Optical net gain measurement on AlGaN/GaN multi-quantum well
Quang Minh Thai, Sergi Cuesta, Lou Denaix +5
We present net gain measurements at room temperature in AlGaN/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measur…
Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale
C. Bougerol, E. Robin, E. Di Russo +5
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…
Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources
A. Harikumar, F. Donatini, C. Bougerol +6
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application…
Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
Marta Orrù, Eric Robin, Martien I Den Hertog +6
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with C…
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
A. Ajay, C. B. Lim, D. A. Browne +5
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength inf…
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero +7
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For I…
Optical properties of single ZnTe nanowires grown at low temperature
Alberto Artioli, Pamela Rueda-Fonseca, Petr Stepanov +11
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and a…
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexa…
Polarity determination in ZnSe nanowires by HAADF STEM
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The…
Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columns
Thibaut Devillers, Matthieu Jamet, André Barski +5
We report on the structural and magnetic properties of thin Ge(1-x)Mn(x)films grown by molecular beam epitaxy (MBE) on Ge(001) substrates at temperatures (Tg) ranging from 80deg C…