3 papers
cond-mat.mtrl-sci2026
Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics
Maike Gremmel, Roberto Guido, Victor Witte +2
Ferroelectric memories based on the wurtzite-structured ferroelectrics are projected to store information for more than 3 million years at 150C. These results are extracted by comb…
cond-mat.mtrl-sci2025
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya +3
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusin…
physics.app-ph2024
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Md Redwanul Islam, Niklas Wolff, Georg Schönweger +8
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…