13 citations · 31 across the 3 of their papers we have counts for
3 papers
Modeling of electrochemical oxide film growth -- a PDM refinement
Ingmar Bösing, Fabio La Mantia, Jorg Thöming
The Point Defect Model (PDM) is known for over 40 years and has brought deeper insight to the understanding of passivity. During the last decades it has seen several changes and re…
Modeling of electrochemical oxide film growth -- impact of band-to-band tunneling
Ingmar Bösing, Jorg Thöming, Fabio La Mantia
The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by the electric fi…
Electro-Oxidation of p-Silicon in Fluoride-Containing Electrolyte: A Physical Model for the Regime of Negative Differential Resistance
Munir Salman, Maximilian Patzauer, Dominique Koster +2
When Si is anodically oxidized in a fluoride containing electrolyte, an oxide layer is grown. Simultaneously, the layer is etched by the fluoride containing electrolyte. The result…