most citedRecord cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

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cond-mat.mtrl-sci2024

Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering

Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2

Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…

cond-mat.mtrl-sci2024

Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure

Asraful Haque, Suman Kumar Mandal, Shubham Kumar Parate +4

Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrat…

cond-mat.mtrl-sci2024

Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si

Binoy Krishna De, V. G. Sathe, Divya +5

Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…

cond-mat.mtrl-sci20241 cited

Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2

On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…

cond-mat.mtrl-sci2023

Giant electrostriction in bulk RE (III) substituted CeO2: effect of RE 3+ and its concentration

Soumyajyoti Mondal, Pooja Punetha, Rajeev Ranjan +1

Recent discovery of giant electrostriction in rare earth (RE (III)) substituted ceria (CeO2) thin films driven by electroactive defect complexes and their coordinated elastic respo…

cond-mat.mtrl-sci2023

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Sandeep Vura, Shubham Kumar Parate, Subhajit Pal +15

Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoe…