3 papers
physics.app-ph2019
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…
physics.ins-det2019
Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume
Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite +6
Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high…
physics.app-ph2018
Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning
Karen M. Dowling, Hannah S. Alpert, Ananth Saran Yalamarthy +5
This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce…