2 papers
cond-mat.mes-hall2025
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…
cond-mat.mes-hall2025
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
Till Huckemann, Pascal Muster, Wolfram Langheinrich +12
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…