The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

Hongwei Tang, Dennis Lin, Subhali Subhechha +14

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…