most citedA new FDSOI spin qubit platform with 40nm effective control pitch

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physics.app-ph2023

Numerical simulation and analytical modelling of self-heating in FDSOI MOSFETs down to very deep cryogenic temperatures

G. Ghibaudo, M. Cassé, F. Balestra

Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on 30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature ris…