collaborators

6 papers

cond-mat.mtrl-sci2025

Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures

Hongwei Tang, Attilio Belmonte, Dennis Lin +10

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semico…

physics.app-ph2025

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

Hongwei Tang, Dennis Lin, Subhali Subhechha +14

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…

cond-mat.mtrl-sci2025

Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

Kevin M. Dorney, Ivan Pollentier, Fabian Holzmeier +11

Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufac…

cond-mat.mtrl-sci2025

Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach

Laura Galleni, Dhirendra P. Singh, Thierry Conard +5

Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient in…

cond-mat.mtrl-sci2025

Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: the Leading Role of the Electrostatic Landscape

Laura Galleni, Arne Meulemans, Faegheh S. Sajjadian +8

The broadening in photoelectron spectra of polymers can be attributed to several factors, such as light source spread, spectrometer resolution, finite lifetime of the hole state, a…

cond-mat.mtrl-sci2025

In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

A. Kruv, M. J. van Setten, A. Chasin +12

Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…