Xuan P. A. Gao

activity

20012025

most citedIntrinsic electron mobility exceeding 1000 cm

^{2}

/Vs in multilayer InSe FETs

440 citations · 2.3k across the 34 of their papers we have counts for

collaborators

Showing 2017Show all

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cond-mat.mes-hall2017★ 27 cited

Anisotropic electrical resistance in mesoscopic LaAlO $_{3}$ /SrTiO $_{3}$ devices with individual domain walls

Nicholas J. Goble, Richard Akrobetu, Hicham Zaid +4

The crystal structure of bulk SrTiO $_{3}$ (STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO $_{3}$ /SrTiO $_{3}$ (LAO/STO) interfac…

Anisotropic electrical resistance in mesoscopic LaAlO3​/SrTiO3​ devices with individual domain walls

Anisotropic electrical resistance in mesoscopic LaAlO $_{3}$ /SrTiO $_{3}$ devices with individual domain walls