2 papers
cond-mat.mtrl-sci2025
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
Asir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder +5
For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used…
cs.LG2024
Compact Model Parameter Extraction via Derivative-Free Optimization
Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo +4
In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter…