Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

Asir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder +5

For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used…