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cond-mat.mtrl-sci2025
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future à ngström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mate…
cond-mat.mtrl-sci2024
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Linqiang Xu, Yue Hu, Lianqiang Xu +6
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…