Computational Design of Two-Dimensional MoSi${}_2$N${}_4$ Family Field-Effect Transistor for Future à ngström-Scale CMOS Technology Nodes

Che Chen Tho, Zongmeng Yang, Shibo Fang +9

Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mate…