47 citations · 51 across the 4 of their papers we have counts for
3 papers · 1 filter
Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering
L. Zhou, L. Puntigam, P. Lunkenheimer +7
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the materia…
Controlling local resistance via electric-field induced dislocations
D. M. Evans, D. R. Småbråten, T. S. Holstad +7
Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matt…
Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO
T. S. Holstad, D. M. Evans, A. Ruff +8
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more…