1 citations · 1 across the 1 of their papers we have counts for
6 papers
Efficient Quantum-Mechanical Modeling of Nonradiative Charge Transfer Processes
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +2
Nonradiative charge transfer processes play a central role in a wide range of physical phenomena, including reliability phenomena in semiconductor devices such as bias temperature…
Performance and reliability potential of BiOSe/BiSeO transistors
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +16
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challen…
Valley Splittings in Si/SiGe Heterostructures from First Principles
Lukas Cvitkovich, Tancredi Salamone, Christoph Wilhelmer +3
We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description…
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…
Machine Learning Force Field for Thermal Oxidation of Silicon
Lukas Cvitkovich, Franz Fehringer, Christoph Wilhelmer +3
Looking back at seven decades of highly extensive application in the semiconductor industry, silicon and its native oxide SiO are still at the heart of several technological de…
Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
Lukas Cvitkovich, Peter Stano, Christoph Wilhelmer +4
On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promis…